SHORT-TERM INNOVATIVE RESEARCH (STIR) PROGRAM: "Synthesizing New Functional 2D Semiconducting Solids"

Abstract

We attempted the growth of 2D SiC on polycrystalline copper rolls using our Chemical Vapor Deposition (CVD) reactor. During the growth process, both CH4 and SiH4 gases were introduced. The specific objective was to create a stable isolated single layer of the SiC material. The Raman spectrum of the sample grown on copper roll at 1000 C with combined flows of CH4 and SiH4 were analzsed. The TEM images confirmed the presence of both C and Si. Most interestingly, Raman spectrum showed SiC like features in the peaks. These results are significant and confirm growth of at least regions of 2D SiC structures.

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Document Details

Document Type
Technical Report
Publication Date
Apr 30, 2017
Accession Number
AD1077862

Entities

People

  • Madhusudan Menon

Organizations

  • University of Kentucky

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Chemical Vapor Deposition
  • Energy Bands
  • Fermi Levels
  • First Principles Calculations
  • G Band
  • Graphene
  • Materials
  • Mechanical Properties
  • Modulus Of Elasticity
  • Raman Spectra
  • Spectra
  • Technology Transfer
  • Tensile Strain
  • Two Dimensional
  • Two-Dimensional Materials
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Organic Chemistry
  • Surface Engineering/Surface Coating Technology.