Displacement Damage Effects in GeSn Light Emitting Diodes

Abstract

Potential future use on Earth-orbiting satellites calls for investigation into the suitability of GeSn based photonic devices in high energy proton environments. The electroluminescence (EL) intensity of Ge1-xSnx (x = 0, 0.02, 0.069, and 0.094) light emitting diodes was measured before and after irradiation by 2 MeV protons at relatively high fluence levels. The results showed that GeSn devices with higher Sn content were up to 10 times more resistant against proton displacement damage than the pure Ge (x = 0) devices. As Sn concentration increased, the band gap decreased, and V-P hole trap energy level moved further from the mid-gap level, resulting in less EL degradation via Shockley-Read-Hall (SRH) process.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2019
Accession Number
AD1078131

Entities

People

  • Kevin K. Choe

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Air Force
  • Artificial Satellites
  • Band Gaps
  • Band Structures
  • Crystal Structure
  • Department Of Defense
  • Detection
  • Detectors
  • Electrical Properties
  • Electromagnetic Fields
  • Electronic Components
  • Energy Bands
  • Governments
  • Light Emitting Diodes
  • Optical Properties
  • Semiconductors
  • United States Government

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Space