Transport in Complex Crystalline Materials Based on van der Waals Heterostructures
Abstract
A dearth of high-quality 2-D semiconductors and the difficulty of scaling down 3-D semiconductors have severely limited the prospects for the development of next-generation energy efficient electronic devices. To overcome these challenges, we have developed a technique to integrate van der Waals 2-D and conventional 3-D semiconductors. Our resultant novel 2-D/3-Dheterostructure consists of molybdenum disulfide as the 2-D component encapsulated between 3-D gallium nitride in a vertical configuration. This ultra-thin structure is a promising material system as a component of an improved heterojunction bipolar transistor (HBT). High-quality, defect-free interfaces between the 2- and 3-D systems, a critical criterion for efficient HBT device operation, was achieved through chemical powder vaporization, metal-organic chemical vapor deposition, and molecular beam epitaxy. We also synthesized a trilayer 3-D/2-D/3-D semiconductor structure (the first demonstration of itskind), validated all major critical aspects of the design, and performed a feasibility study of our design and microfabrication process for a functional HBT model. In particular, 2-D/3-D diode behavior was demonstrated for the fully synthesizedheterostructures built without mechanical transfer. The outcomes of this basic research effort could pave the way for explorations into the novel physics of 2-D materials for energy-efficient electronics devices and systems.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 2019
- Accession Number
- AD1078381
Entities
People
- A. Glen Birdwell
- Dmitry Ruzmetov
- Edward F. C. Byrd
- Mahesh R. Neupane
- Matthew L. Chin
- Michael D. Valentin
- Robert A. Burke
- Ryan Enck
- Tony Ivanov
Organizations
- United States Army Research Laboratory