Design Comparison of Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs) for Linear-Mode Operation

Abstract

Silicon carbide metal-oxide semiconductor field-effect transistors (MOSFETs) were designed and fabricated for linear-mode applications. The MOSFETs have a chip area of 3.3 x 3.3 mm and a voltage-blocking rating up to 1200 V. The device design parameters, such as channel length, gate oxide thickness, and implantation process, were varied to study the effects on operation in the saturation region. The MOSFETs were evaluated in a pulse circuit at pulse widths ranging from 250 microsecond to 40 ms. The MOSFETs with the thicker oxide (625 A) sustained greater pulsed energy dissipation (over 130 J/cm2) than those with thinner oxide. Results suggest that linear-mode silicon carbide MOSFETs with thick oxide can dissipate five times greater pulsed energy density than their commercial silicon counterparts.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 2019
Accession Number
AD1079943

Entities

People

  • Aderinto Ogunniyi
  • Brett Hull
  • Damian Urciuoli
  • Heather O'Brien

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitors
  • Carbides
  • Ceramic Materials
  • Compound Semiconductors
  • Dissipation
  • Energy
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Saturation
  • Semiconductor Devices
  • Semiconductors
  • Silicon
  • Silicon Carbide
  • Thickness
  • Transistors

Fields of Study

  • Materials science

Readers

  • Allergy and Immunology.
  • Electrical Engineering
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics