Magnetic topological insulator enabled spin-orbit torque device applications - 4.1 Nano-and Bio-Electronics

Abstract

In the original proposal, we proposed to study the current-induced spin-orbit torque (SOT) in the uniformly Cr-doped magnetic topological insulator (TI) sandwiched between two different dielectric materials to reveal the origin of the giant SOT. During the research period, we have successfully grown Cr-doped TIs on GaAs substrate with high quality and cap it with Al2O3 layer. The magnetism in the Cr-doped TI is very robust, and it can even reach the quantum anomalous Hall phase at low temperature (see X. Kou et al., Nature Communications 6:8474 (2015)). Then we probed the current-induced SOT in this structure.

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Document Details

Document Type
Technical Report
Publication Date
Jul 31, 2015
Accession Number
AD1081440

Entities

People

  • Kang L. Wang

Organizations

  • University of California, Los Angeles

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Dielectrics
  • Electric Fields
  • Electrical Engineering
  • Heavy Metals
  • Logic
  • Logic Devices
  • Low Temperature
  • Magnetic Fields
  • Magnetic Materials
  • Magnetic Moments
  • Materials
  • Momentum
  • Nanoelectronics
  • Phase Diagrams
  • Quantum Properties
  • Spin-Orbit Interaction

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Space