Vertical Transport in InAs/GaSb and InAs/InAsSb Superlattices: 4.3 Electronic Sensing

Abstract

Vertical transport in narrow band gap antimonide based type-II strained layer superlattices (T2SLs) is a significant problem for the design of Mid-Wave Infrared (MWIR, 3-5 ?m) photodetectors. Investigation of the transport of electrons and holes in T2SLs is necessary to understand better how or if one can improve carrier collection efficiency through design or changes in material properties of this essential infrared absorber material. This report provides lateral and vertical transport results using magneto-transport for InAsSb alloys (isotropic) and InAs/InAsSb T2SLs (anisotropic). Then, vertical transport using EBIC technique will be discussed with results for InAs/GaSb T2SL.

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Document Details

Document Type
Technical Report
Publication Date
Mar 31, 2019
Accession Number
AD1082681

Entities

People

  • Ganesh Balakrishnan
  • Lilian K. Casias
  • Sanjay Krishna
  • Zahra Taghipour

Organizations

  • University of New Mexico

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Band Gaps
  • Carrier Mobility
  • Charge Carriers
  • Detection
  • Detectors
  • Electron Beams
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Hall Effect
  • Infrared Detectors
  • Magnetic Fields
  • Military Research
  • Semiconductors
  • Transport Properties
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics