Review-Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-k Dielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride
Abstract
Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic devices. While electrical, optical, and interfacial properties have been the primary consideration for such devices, thermal and mechanical properties are becoming an additional key consideration for many new and emerging applications of ALD high-k materials in electromechanical, energy storage, and organic light emitting diode devices. Unfortunately, a clear correspondence between thermal/mechanical and electrical/optical properties in ALD high-k materials has yet to be established, and a detailed comparison to conventional silicon-based dielectrics to facilitate optimal material selection is also lacking. In this regard, we have conducted a comprehensive investigation and review of the thermal, mechanical, electrical, optical, and structural properties for a series of prevalent and emerging ALD high-k materials including aluminum oxide (Al2O3), aluminum nitride (A1N), hafnium oxide (HfO2), and beryllium oxide (BeO).
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 05, 2017
- Accession Number
- AD1084068
Entities
People
- Anthony N. Caruso
- Antonio M. Rudolph
- Bradley J. Nordell
- David C. Johnson
- Devin R. Merrill
- Donghyi Koh
- Erik Hadland
- John T. Gaskins
- Jung Hwan Yum
- Li Han
- Liyi Li
- Liza Ross
- Marc French
- Michelle M. Paquette
- Patrick E Hopkins
- Patrick Henry
- Sage R Bauers
- Sanjay Banerjee
- Sean W. King
- W. A. Lanford
Organizations
- University of Virginia