Fundamental Study of Antimonide Nanostructures by Molecular Beam Epitaxy (Phase II: GaSb VS InSb QDs)

Abstract

This second annual report summarizes the results and output resulting from research activities during the past 12 months of the project supported by AOARD co-funded by ONRG from September 2017 to September 2018 conducted at Chulalongkorn University in Thailand. Following the research work on InAs quantum dots (QDs) and quantum dot molecules (QDMs) grown by molecular beam epitaxy (MBE), the research target is extended to GaSb QDs and InSb QDs on different substrates, i.e. GaAs/GaSb/InAs and Ge giving either type II or type III quantum nanostructures. This type II nanostructures would have a unique property of separated carrier confinement for novel nanoelectronic devices such as IR detectors, solar cells, memory devices, etc., and type III with tunneling effect for fast nanoelectronic devices. In phase II of the project, various physical, electrical and optical properties of these two nanostructures, i.e. GaSb and InSb, are intensively studied. The experiment is also extended to magnetic property of InSb nanostructure due to high-g factor.

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Document Details

Document Type
Technical Report
Publication Date
Mar 27, 2019
Accession Number
AD1085923

Entities

People

  • Somsak Panyakeow

Organizations

  • Chulalongkorn University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Antimonides
  • Cells
  • Compound Semiconductors
  • Detection
  • Detectors
  • Epitaxial Growth
  • Infrared Detectors
  • Magnetic Fields
  • Military Research
  • Molecular Beam Epitaxy
  • Optical Properties
  • Quantum Dots
  • Semiconductor Devices
  • Semiconductors
  • Solar Cells

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing