Field Emission from Integrated Planar Graphene Edges
Abstract
We demonstrated field emission from graphene edges integrated with gate and drain electrodes on a common dielectric substrate. We also demonstrated field emission current densities over 1mA/mm, limited by issues unrelated to the field emission process. This work is a first step toward building an integrated vacuum transistor using vacuum transport parallel to the substrate surface. Such a device could overcome the performance limitations caused by semiconductor transport while maintaining the size, weight, fabrication technology, and cost of solid-state devices. As a vacuum transport device, it could operate in high temperature and high radiation environments.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 18, 2019
- Accession Number
- AD1086069
Entities
People
- Byoung-don Kong
- J. L. Shaw
- John B. Boos
Organizations
- United States Naval Research Laboratory