Radiation Effects in 2D Heterostructure Devices

Abstract

The overall objective of this project was to develop a fundamental understanding of radiation-induced defects in heterostructure devices fabricated using 2D materials, including the atomic-scale nature and location of defects in the heterostructures, the impact of these defects on operation for both lateral and vertical electronic transport, and the potential characterization, device fabrication and characterization, radiation and reliability effects, and density-functional-theory (DFT) calculations to develop a fundamental understanding of radiation-induced defects in these devices.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Oct 31, 2019
Accession Number
AD1086283

Entities

People

  • Daniel M. Fleetwood
  • En Xia Zhang
  • Eric M Vogel
  • Sokrates T. Pantelides

Organizations

  • Georgia Tech

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Density Functional Theory
  • Energy Bands
  • Fabrication
  • Fermi Levels
  • Field Effect Transistors
  • Materials
  • Materials Processing
  • Materials Science
  • Radiation Effects
  • Self Assembled Monolayers
  • Semiconductors
  • Solid State Physics
  • Two Dimensional
  • Two-Dimensional Materials
  • X Rays

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics