Alloying Behavior and Crystallinity of (111)-Oriented Lead Tin Telluride Grown on (100)-Oriented Gallium Arsenide

Abstract

Ternary lead tin telluride (PbxSn1-xTe) alloy films are grown on (100)-oriented gallium arsenide (GaAs) substrates with molecular beam epitaxy in order to achieve a heteroepitaxial system that enables technological innovations for IR photonics, thermoelectrics, and topological insulators. X-ray diffraction is used to study the crystallinity of this ternary alloy and its epitaxial nature in relation to the GaAs substrate. Symmetric 2x12;-! scans across the alloy range and a reciprocal space map (RSM) of a ternary PbxSn1-xTe compound confirm an epitaxial growth, with a (111)-oriented film on a (100)-oriented substrate. Broadening in reciprocal space within the RSM makes it difficult to determine an in-plane lattice constant or strain, but evidence indicates that the film is relaxed. This work enables innovations in future growth for Group IV-VI materials on III-V substrates to develop technologies in the aforementioned application space.

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Document Details

Document Type
Technical Report
Publication Date
Dec 19, 2019
Accession Number
AD1088254

Entities

People

  • Patrick Taylor
  • Vijay Parameshwaran

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemistry
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Cubic Lattices
  • Diffraction
  • Epitaxial Growth
  • Gallium Arsenides
  • Lead Tellurides
  • Lead Tin Tellurides
  • Materials
  • Molecular Beam Epitaxy
  • Scattering
  • Thermal Expansion
  • Two Dimensional
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Space