Phase Change Dynamics And 2-Dimensional 4-BIT Memory In Ge(2)Sb(2)Te(5) VIA Telecom-Band Encoding (Preprint)
Abstract
As modern computing gets continuously pushed up against the von Neumann Bottleneck-limiting the ultimate speeds for data transfer and computation-new computing methods are needed in order to bypass this issue and keep our computers evolution moving forward, such as hybrid computing with an optical co-processor, all-optical computing, or photonic neuromorphic computing. In any of these protocols, we require an optical memory: either a multilevel/accumulator memory, or a computational memory. Here, we propose and demonstrate a 2-dimensional 4-bit fully optical non-volatile memory using Ge2Sb2Te5 (GST) phase change materials, with encoding via a 1550 nm laser. Using the telecom-band laser, we are able to reach deeper into the material due to the low-loss nature of GST at this wavelength range, hence increasing the number of optical write/read levels compared to previous demonstrations, while simultaneously staying within acceptable read/write energies.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 25, 2019
- Accession Number
- AD1090345
Entities
People
- Andrew Sarangan
- Christopher Perez
- Gary A. Sevison
- Heungdong Kwon
- Imad Agha
- Jaeho Lee
- Joshua A. Burrow
- Joshua R Hendrickson
- Kenneth E. Goodson
- Mehdi Asheghi
- Shiva Farzinazar
Organizations
- Air Force Research Laboratory