The Basic Science Underlying CdMgTe Passivation of SWIR HgCdTe
Abstract
The primary goal consists of developing an innovative passivation approach for interfaces in shortwave infrared (SWIR) detectors based on HgCdTe. While this research ultimately aims to enhance the detectivity of SWIR detectors by improving current approaches to surface passivation, it also extends the knowledge base of fundamental semiconductor physics. We will apply new optical techniques to better understand the basic science of passivation schemes based on CdTe to evaluate its efficacy and to investigate potential improvements in interfacequality based on the use of CdMgTe. The approaches used to achieve this goal is as follows: (1) Utilize extensive optical characterization studies photoconductance decay (PCD), photoluminescence (PL) spectroscopy, transient time-resolved PL (TRPL) and PL intensity (PL-I) measurements to determine the current quality of CdTe passivation for SWIR MCT surfaces. (2) Evaluate improvement due to the addition of CdMgTe as a surface passivation scheme. Assess the efficacy of interdiffusion on the quality of the resulting passivation. (3) Utilize IR cathodoluminescence (CL) for defect characterization and variable-temperature/variable-field Hall measurements analyzed for multiple conduction layer effects as often observed in MCT. (4) Educate the next generation of scholars for DoD-pertinent technologies.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 20, 2019
- Accession Number
- AD1091233
Entities
People
- M. Holtz
- T. H. Myers
Organizations
- Texas State University