Comparison of Planar vs. Textured Silicon Carbide (SiC) Betavoltaic Devices

Abstract

This technical report describes the US Army Combat Capabilities Development Command Army Research Laboratory's FY19 research effort on silicon carbide (SiC) PIN betavoltaic devices. We compare the output power of SiC betavoltaic devices in both planar and textured geometries upon deposition of liquid 63NiCl2 radioisotopes. Our liquid radioisotope device results suggest an 8 improvement of output power in going from a planar to a textured design. This work was done in collaboration with Oak Ridge National Laboratory and the University at Albany.

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Document Details

Document Type
Technical Report
Publication Date
Feb 19, 2020
Accession Number
AD1092097

Entities

People

  • Brenda A. Smith
  • Claude Pullen
  • Iain Kierzewski
  • Kasey Hogan
  • Marc S. Litz
  • Mohamed Doumbia
  • Randy P. Tompkins
  • Shadi Shahedipour-sandvik
  • Stephen Kelley

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Carbides
  • Ceramic Materials
  • Compound Semiconductors
  • Electron Beams
  • Electron Energy
  • Electron Holes
  • Electronics Laboratories
  • Energy
  • Gallium Nitrides
  • Geometry
  • Isotopes
  • Measurement
  • Military Research
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Three Dimensional

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology
  • Solar Photovoltaics and Thermoelectric Devices.
  • Technical Research and Report Writing.