P-Gallium Nitride (GaN) Ohmic Contact Process Development

Abstract

Low-resistance ohmic contacts to magnesium-doped p-type gallium nitride (GaN) grown by both metalorganic chemical vapor deposition and molecular beam epitaxy with carrier concentrations of 10^15 and 10^18 cm^3 were studied and their measured p-type specific contact resistivities were as low as 5.3 10^3 ( cm^2) and 1.8 10^3 ( cm^2), respectively. The optimized process included electron beam deposited palladium (Pd)/nickel/gold (Au) or Pd/Au contacts annealed at 500 to 550 C for 10 min in a flowing N2 and O2 ambient. Prior to deposition, the GaN surface was treated to remove the native oxide by buffer oxide etching and hydrochloride etching at 100 C for 10 min.

Document Details

• Document Type: Technical Report
• Publication Date: Mar 03, 2020
• Accession Number: AD1092610

Entities

People

• Guifu Sun
• Kim Olver
• Randy Tompkins
• Ryan Enck

Organizations

• United States Army Research Laboratory

Tags

Communities of Interest

• Advanced Electronics

DTIC Thesaurus Topics

• Bessel Functions
• Chemical Vapor Deposition
• Compound Semiconductors
• Electron Beams
• Epitaxial Growth
• Gallium
• Gallium Nitrides
• Materials
• Metal-Semiconductor Junctions
• Metals
• Molecular Beam Epitaxy
• Molecular Beams
• Nitrides
• Resistance
• Semiconductors
• Transmission Lines
• Vapor Deposition

Fields of Study

• Materials science

Readers

• Semiconductor Device Technology

Technology Areas

• Directed Energy
• Directed Energy - Pulsed-Laser Deposition
• Microelectronics
• Microelectronics - Graphene