The Structure and Properties of Amorphous Indium Oxide

Abstract

A series of In2O3 thin films, ranging from X-ray diffraction amorphous to highly crystalline, were grown on amorphous silica substrates using pulsed laser deposition by varying the film growth temperature. The amorphous-to-crystalline transition and the structure of amorphous In2O3 were investigated by grazing angle X-ray diffraction (GIXRD), Hall transport measurement, high resolution transmission electron microscopy (HRTEM), electron diffraction, extended X-ray absorption fine structure (EXAFS), and ab initio molecular dynamics (MD) liquid-quench simulation. On the basis of excellent agreement between the EXAFS and MD results, a model of the amorphous oxide structure as a network of InOx polyhedra was constructed. Mechanisms for the transport properties observed in the crystalline, amorphous-to-crystalline, and amorphous deposition regions are presented, highlighting a unique structureproperty relationship.

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Document Details

Document Type
Technical Report
Publication Date
Sep 02, 2014
Accession Number
AD1094083

Entities

People

  • Arturo Ponce
  • D. B. Buchholz
  • Diego Alducin
  • Julia E. Medvedeva
  • Miguel José-yacaman
  • Qing Ma
  • Rabi Khanal
  • Robert P. Chang

Organizations

  • University of Texas at San Antonio

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amorphous Materials
  • Band Structures
  • Carrier Mobility
  • Chemistry
  • Density Functional Theory
  • Diffraction
  • Materials
  • Materials Science
  • Molecular Dynamics
  • Optical Materials
  • Optical Properties
  • Oxide Films
  • Scattering
  • Semiconductors
  • Thin Film Transistors
  • Thin Films
  • United States

Fields of Study

  • Materials science
  • Physics

Readers

  • Quantum Chemistry
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene