Two-Dimensional Atomic Layer Systems for Low Dissipation Flexible Device Applications
Abstract
Sheets of carbon atoms called graphene have transformed materials science and engineering, and they have also suggested a world beyond graphene, including other 2D materials and layered 2D systems with novel, alluring properties. As a consequence, there is now a need for (a) the scalable growth of these 2D materials, (b) the stacking of 2D materials in desired configurations, (c) the characterization of the obtained systems, (d) device fabrication, (e) device characterization, and (e) the measurement of their physical properties. The focus areas of this project are material preparation and device fabrication, the measurement and study of the electrical- and optical- properties, and associated applications of layered 2D systems including bilayer and monolayer graphene, GaAs/AlGaAs 2DES, atomically thin hexagonal boron nitride, and mono- and bilayer-molybdenum disulfide. Such a study of the building blocks, and especially of coupled stacks of such 2D materials obtained via van der Waals hetero-epitaxy, can potentially impact the DoD mission by advancing materials and technology for new low-power and low-dissipation devices for portable flexible electronics electronics that can provide more functionality in a smaller device with lower energy consumption.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 16, 2020
- Accession Number
- AD1095580
Entities
People
- Ramesh G. Mani
Organizations
- Georgia State University