Coherent Backscattering In Quasi-ballistic Ultra High Mobility GaAs/AlGaAs 2DES
Abstract
A small and narrow negative-magnetoresistance (MR) effect that appears about null magnetic field overthe interval 0.025 B 0.025 T in magneto transport studies of the GaAs/AlGaAs 2D system with 107cm2/Vs is experimentally examined as a function of the sample temperature, T. The temperaturedependent magnetoresistance data were fit using the Hikami et al. theory, without including the spinorbitcorrection, to extract the inelastic length, li, which decreases rapidly with increasing temperature.It turns out that li < le, where le is the elastic length, for all T. Thus, we measured the single particlelifetime, s, and the single particle mean free path ls = vFs. A comparison between li and ls indicatesthat li > ls. The results suggest that the observed small and narrow magnetoresistance effect about nullmagnetic field could be a manifestation of coherent backscattering due to small angle scattering fromremote ionized donors in the high mobility GaAs/AlGaAs 2DES.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 03, 2018
- Accession Number
- AD1096182
Entities
People
- A. Kriisa
- B. Gunawardana
- C. Reich
- H. C. Liu
- R. G. Mani
- R. L. Samaraweera
- W. Wegscheider
Organizations
- Georgia State University