Innovative Silicon and InP Integrated Photonic Devices for RF Frequency Downconversion
Abstract
We demonstrate the generation of radio-frequency (RF) signals using stabilizedintegrated semiconductor lasers. The lasers are monolithically integrated on the same chip using InPactive-passive integration technology. They are locked to different resonances of the same externaloptical cavity using the Pound-Drever-Hall locking technique. The locking is implement with a singlecontrol loop for each laser and by voltage controlled tuning thus avoiding significant thermal effects.The generated RF signal can be tuned discretely to frequencies that are multiples of the external opticalcavity free spectral range. Examples of beat tones at 12.436, 24.8735 and 40.4194 GHz are demonstrated. The linewidth of the generated signals at all frequencies is less than 40 kHz. Thesingle-side-band phase noise is about -54 dBc/Hz for frequencies offsets from the carrier at 12.436GHz between 1 kHz and 10 kHz and -60 and -67 dBc/Hz at 100 kHz and 1 MHz respectively. Wealso demonstrate the realization of silicon photonics-based RF modulators. Optimized structures aredesigned and realized for 30 GHz operation, including a resonant Si Mach-Zehnder modulator and atraveling wave Mach-Zehnder modulator.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 13, 2019
- Accession Number
- AD1096390
Entities
People
- E.A.J.M. Bente
- Günther Roelkens
- Kasper Van Gasse
- Stefanos Andreon
Organizations
- Ghent University