Investigating Heteroepitaxy Principles and Transport Characteristics of Vertically Integrated GaN-on-Graphene Heterostructures

Abstract

Next generation high-power and high-frequency power electronics will operate at power densities and frequencies reaching above60 W/mm and 10 GHz, respectively. Here, annealed, thin-Al2O3/AlGaN/GaN metal-insulator-semiconductor heterostructures on Si(111) are fabricated and studied via capacitance voltage measurements to quantify densities of fast and slow interface trap states and via current voltage measurements to investigate dominant gate current leakage mechanisms. This project pushes our understanding on the limits of electron and photon interactions with matter, and explores thermal properties of GaN as well as GaN /substrate interfaces.

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Document Details

Document Type
Technical Report
Publication Date
Aug 16, 2019
Accession Number
AD1096597

Entities

People

  • Can Bayram

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemistry
  • Compound Semiconductors
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Dielectric Permittivity
  • Electron Energy
  • Electron Mobility
  • Electronics Industry
  • Electronics Laboratories
  • Fermi Levels
  • Heat Transfer
  • Power Electronics
  • Semiconductors
  • Silicon Carbide
  • Thermal Conductivity
  • Three Dimensional
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics