High Performance Short Channel Field Effect Transistors Based on 2D Materials with Ohmic Contacts

Abstract

We have built on our discovery of achieving clean contacts using indium as the contact metal. In addition, we have begun to tune the metal deposition method achieve clean interfaces between refractory metals with high work functions and 2-D semiconductors to achieve p-type contacts. Our very recent results suggest it is possible to create clean vdW contacts via direct deposition of high work function metals on single TMD semiconductors. Our strategy is to use a very low deposition rates and substrate cooling down to 77K to eliminate damage and chemical reactions.

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Document Details

Document Type
Technical Report
Publication Date
Oct 30, 2019
Accession Number
AD1096690

Entities

People

  • Manishkumar U. Chhowalla

Organizations

  • Rutgers University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Chemical Reactions
  • Current Density
  • Electrodes
  • Energy Bands
  • Energy Levels
  • Field Effect Transistors
  • Low Temperature
  • Materials
  • Metal-Semiconductor Junctions
  • Semiconductors
  • Thermionic Emission
  • Transistors
  • Two Dimensional
  • Two-Dimensional Materials
  • Work Functions

Readers

  • Pulsed Power and Plasma Physics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Tribology (the study of the boundary interaction between sliding surfaces, lubrication, wear and friction).

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene