Valence and Conduction Band Offsets for InN and III-Nitride Ternary Alloys on (-201) Bulk Beta-Ga2O3

Abstract

Valence and conduction band offsets of the InN/beta-Ga2O3 type-I heterojunction have been determined to be -0.55 +or- 0.11 eV and -3.35 +or- 0.11 eV, respectively, using X-ray photoelectron spectroscopy. The InN layers were grown using atomic layer epitaxy on (-201) oriented commercial beta-Ga2O3 substrates. Combining this data with published band offsets for the GaN and AlN heterojunctions to beta-Ga2O3 has allowed us to predict the band offsets for the AlGaN, AlInN, and InGaN ternary alloys to beta-Ga2O3. The conduction band offsets for InGaN and AlInN to beta-Ga2O3 increased for high In concentration and, similarly, the valence band offsets for AlGaN and AlInN to beta-Ga2O3 decreased at high Al concentration.

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Document Details

Document Type
Technical Report
Publication Date
Mar 16, 2019
Accession Number
AD1097210

Entities

People

  • Chaker Fares
  • Charles Jr R. Eddy
  • Fan Ren
  • J. Woodward
  • Marko J. Tadjer
  • Michael A. Mastro
  • Neeraj Nepal
  • Stephen Pearton

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Atomic Layer Epitaxy
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Conduction Bands
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Energy Levels
  • Films
  • Heterojunctions
  • High Resolution
  • Materials
  • Measurement
  • Semiconductors
  • Silicon Carbide
  • Spectroscopy
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics