Valleytronic Logic Gate: FY19 Advanced Devices Line-Supported Program

Abstract

Classical computing faces a significant challenge. Field effect transistor technology is reaching the fundamental limits of scaling and no proposed replacement technology has yet demonstrated even comparable performance. A transformational device based on new physical phenomena could provide a new route to continued improvement in microelectronic power and performance. Two-dimensional transition metal dichalcogenides (TMDs) possess a number of intriguing electronic, photonic, and excitonic properties. This proposal focuses on their Valleytronic properties, which are truly unique to this new class of materials. Due to a lack of inversion symmetry and strong spin-orbit coupling, 2D TMDs possess individually addressable valleys in momentum space at the K and K' points in the first Brillouin zone. This valley addressability opens the possibility of using electron and hole momentum states as a completely new paradigm in information processing. Manipulating the K and K' momentum states could permit classical computation at a small fraction of the energy cost incurred by traditional field effect transistors. The Valleytronic Logic Gate Line program began to explore the viability of creating a classical logic gate which would provide a PPA (power, performance, area) advantage over silicon CMOS. It was not within the scope of funding to build a logic gate and test it experimentally. Instead, some basic valleytronic material parameters were measured and using that information an analysis was performed of the power and speed of a notional gate design. Section 1 provides an introduction to valleytronic principles, Section 2 describes the measurements, Section 3 describes the performance projections, Section 4 summarizes the results of the project and Section 5 lists references and Lincoln and MIT external presentations from this work in FY19.

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Document Details

Document Type
Technical Report
Publication Date
Jan 27, 2020
Accession Number
AD1098513

Entities

People

  • S. A. Vitale

Organizations

  • MIT Lincoln Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Brillouin Zones
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Detection
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • Information Processing
  • Logic Gates
  • Materials
  • Materials Science
  • Optical Properties
  • Semiconductors
  • Spin-Orbit Interaction
  • Transition Metals
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Space