Low-Defect III-N Devices By Remote Epitaxial GaN: FY19 Advanced Materials and Processes Line-Supported Program
Abstract
Gallium nitride (GaN) is an important semiconductor, not just for visible-to-UV light emitters but also for high-power, high-voltage and high-frequency electronics. Much of the challenge in realizing a manufacturable process for GaN devices, particularly those requiring a low-defect density, is mitigating the unfavorable trade between substrate cost and suitability. Low-defect GaN substrates are commercially available but are expensive and still limited to a maximum of 100 mm diameter. Having the ability to separate the expensive GaN substrate from low-defect device layers, (nondestructively to both) would be an enabling technology for III-N devices. The goal of this program was to investigate using remote-epitaxy of GaN (RE-GaN) utilizing a thin graphene (or similar) layer to enable fracture and separation of the film at this interface due to the weakened bond strength due to graphitic layer.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 24, 2020
- Accession Number
- AD1098579
Entities
People
- B. Kim
- R. J. Molnar
- T. Osadchy
- Weimeng Kong
Organizations
- MIT Lincoln Laboratory