Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors

Abstract

We show that by adding only two fitting parameters to a purely ballistic transport model, we can accurately characterize the current-voltage characteristics of nanoscale MOSFETs. The model is an extension of Natori's model and includes transmission probability and drain-channel coupling parameter. The latter parameter gives rise to a theoretical R-ON that is significantly larger than those predicted previously. To validate our model, we fabricated n-channel MOSFETs with varying channel lengths. We show the length dependence of these parameters to support a quasi-ballistic description of our devices.

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Document Details

Document Type
Technical Report
Publication Date
Jan 24, 2019
Accession Number
AD1098686

Entities

People

  • Harold L. Hughes
  • Ji U. Lee
  • Phung Nguyen
  • Prathamesh Dhakras
  • Ramya Cuduvally

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Channel Models
  • Conduction Bands
  • Couplings
  • Dispersion Relations
  • Electric Fields
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Experimental Data
  • Fermi Levels
  • Fittings
  • Geometry
  • Materials
  • Mean Free Path
  • Mobility
  • Scattering
  • Transistors

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
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  • Semiconductor Device Technology