Optimal Semiconductors for 3H and 63Ni Betavoltaics

Abstract

Betavoltaic power sources based on the conversion of radioisotope energy to electrical power are considered an appealing option for remote applications due to extended period of operation and high energy densities. However, to be competitive with other power sources, their efficiency must be increased. This can be done through optimization of the beta source and selection of the semiconductor absorber. This paper evaluates available on the market and developing wideband gap semiconductors as prospective absorbers with 3H and 63Ni sources. Simulation results indicate that among wide band gap materials 4H-SiC and diamond are two optimal semiconductors due to the combination of good coupling efficiencies with isotope sources and good electronic transport properties. Additionally, having good coupling efficiency, an ultra-wide bandgap, and the capability for both n- and p-type doping, c-BN is a promising material for betavoltaic applications.

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Document Details

Document Type
Technical Report
Publication Date
Jul 26, 2019
Accession Number
AD1099094

Entities

People

  • Chaffra A. Affouda
  • Jim E. Moore
  • Phillip P. Jenkins
  • Sergey I Maximenko

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Atomic Properties
  • Backscattering
  • Band Gaps
  • Beta Particles
  • Charge Carriers
  • Compound Semiconductors
  • Electron Holes
  • Electron Microscopes
  • Electron Microscopy
  • Monte Carlo Method
  • Scattering
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Solar Cells
  • Two Dimensional
  • Wide Bandgap Semiconductors

Fields of Study

  • Materials science

Readers

  • Solar Photovoltaics and Thermoelectric Devices.
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics