Field emission energy distribution and three-terminal current-voltage characteristics from planar graphene edges

Abstract

We demonstrate field emission from an integrated three-terminal device using a suspended planar graphene edge as the source of vacuum electrons. Energy spectra of the emitted electrons confirm the field-emission mechanism. The energy spectra produced by graphene grown by chemical vapor deposition and reduced graphene oxide are compared. The drain source voltage required to produce a given drain current increases when negative voltages are applied to the gate, confirming field-effect transistor operation. The emission current rises exponentially with inverse voltage over the measured current range from 1 pA to 10 nA. The current-voltage characteristics are consistent with tunneling through barrier potentials calculated numerically from the device geometry.

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Document Details

Document Type
Technical Report
Publication Date
Feb 04, 2019
Accession Number
AD1099607

Entities

People

  • Byoung D. Kong
  • Glenn G. Jernigan
  • J. L. Shaw
  • Jeremy T. Robinson
  • John B. Boos

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Conduction Bands
  • Dielectrics
  • Electric Fields
  • Electrons
  • Emission Spectra
  • Emitters
  • Energy Bands
  • Fermi Levels
  • Field Effect Transistors
  • Field Emission
  • Materials
  • Materials Processing
  • Materials Science
  • Semiconductors
  • Spectra
  • Transistors

Fields of Study

  • Physics

Readers

  • Plasma Physics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene