A Graphene Integrated Highly Transparent Resistive Switching Memory Device

Abstract

We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of greater than 82 percent in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably lowset and reset voltages (less than /- 1 V). The vertical two-terminal device shows an excellent resistive switching behavior with a high on-off ratio of similar to 5 x 10(3). We also fabricated a ITO/Al2O3/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al2O3/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.

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Document Details

Document Type
Technical Report
Publication Date
Apr 30, 2018
Accession Number
AD1100750

Entities

People

  • Brad R Weiner
  • Gerardo Morell
  • Ram S. Katiyar
  • Shojan P. Pavunny
  • Sita Dugu
  • Tej B. Limbu

Organizations

  • United States Naval Research Laboratory

Tags

DTIC Thesaurus Topics

  • Aluminum Oxides
  • Charge Carriers
  • Chemical Vapor Deposition
  • Chemistry
  • Field Effect Transistors
  • Lithium Ion Batteries
  • Materials
  • Materials Laboratories
  • Materials Processing
  • Materials Science
  • Memory Devices
  • Nanotechnology
  • Semiconductors
  • Spectra
  • Spectroscopy
  • Thin Films
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene