Radiation Effects in Diamond Substrates and Transistors

Abstract

Fielld effect transistors (FET) based on diamond have 2- dimensional hole gas (2DHG) as the conduction channel. In terms of usability in harsh environment, an important aspect of diamond based FETs is its promise of radiation hardness. Two different types of radiation were used. A cyclotron was used for proton irradiation on diamond substrates, and a high capacity dry cell, panoramic gamma irradiator with 60Co as source material was used for gamma irradiation on diamond-based FETs. Diamond substrates were irradiated with protons at 152 keV and fluence of 1012 particles/cm2. Diamond-based devices show promise of radiation-hardness, owing to high binding energy of carbon atoms.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 2020
Accession Number
AD1100814

Entities

People

  • Aristos Christou

Organizations

  • University of Maryland

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum Oxides
  • Charge Carriers
  • Charged Particles
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Data Sets
  • Electrical Properties
  • Electrons
  • Energy
  • Environment
  • Field Effect Transistors
  • Gamma Rays
  • High Temperature
  • Ionization
  • Ionizing Radiation
  • Magnetic Fields
  • Materials
  • Materials Science
  • Measurement
  • Power Electronics
  • Radiation
  • Radiation Effects
  • Semiconductor Devices
  • Semiconductor Physics
  • Semiconductors
  • Silicon Carbide
  • Thermal Conductivity
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.