Synthesis of Defect-Mitigating Tunable Dielectric Materials with Atomic-Layer Control
Abstract
The miniaturization and integration of frequency-agile microwave circuitselectronically tunable filters, resonators, phase shifters andmorewith microelectronics offers tantalizing device possibilities, yet requires thin films whose dielectric constant at GHz frequencies canbe tuned by applying a quasi-static electric field. We have achieved a new type of tunable microwave dielectric with a figure of merit atroom temperature that rivals all known tunable microwave dielectrics. This was achieved in biaxially strained Srn+1TinO3n+1 phases withn ? 3 at frequencies up to 125 GHz. We have also understood the growth mechanism of these new materials. For the precise growth ofSrn+1TinO3n+1 RuddlesdenPopper (RP) phases, stoichiometric deposition leads to the loss of the first RP rock-salt double layer, butgrowing with a strontium-rich surface layer restores the bulk stoichiometry and ordering of the subsurface RP structure. Our resultsdramatically expand the materials that can be prepared in epitaxial heterostructures with precise interface controlfrom just the n=? endmembers (perovskites) to the entire RP homologous seriesenabling the exploration of novel quantum phenomena at a richer variety ofoxide interfaces.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 06, 2016
- Accession Number
- AD1101054
Entities
People
- Darrell G. Schlom
Organizations
- Cornell University