Basic Single-Event and Total-Ionizing Dose Mechanisms in Ge/InGaAs-based CMOS Transistors with ALD High k-Dielectric

Abstract

Objective of this work was to determine, using theory and experiments, the basic mechanisms of single-event and total ionizing dose effects in InGaAs and Ge/Si heterostructure MOSFETs with high-k dielectrics/metal gate. We established understanding of radiation-induced charge transport and collection mechanisms on the structure and composition of nanoelectronic Ge and InGaAs FETs on Si, and, on the nature of the ionizing species by modeling/designing devices, fabricating MOS test structures, and testing their electrical behavior under radiation exposure.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2020
Accession Number
AD1103308

Entities

People

  • Jeffrey H. Warner
  • Krishna C. Saraswat
  • Suman Datta

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Chemistry
  • Crystal Lattices
  • Electron Mobility
  • Energy Bands
  • Epitaxial Growth
  • High Electron Mobility Transistors
  • Materials
  • Physical Vapor Deposition
  • Quantum Wells
  • Raman Spectroscopy
  • Scattering
  • Semiconductors
  • Three Dimensional
  • Two Dimensional
  • Valence Bands

Readers

  • Integrated Circuit Design and Technology.
  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology