Silicon Compatible Electrically Pumped Direct Bandgap Ge/GeSn Laser

Abstract

We have made several important contributions towards implementation of a practical CMOS compatible laser, including: 1. A rigorous analysis of the strong interaction between uniaxial strain and parasitic absorption in germanium with major implications for Si -compatible lasing 2. Experimental demonstration of a strained Ge light source 3. Silicon-Compatible Fabrication of Inverse Woodpile Photonic Crystals with a Complete Band Gap

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Document Details

Document Type
Technical Report
Publication Date
Nov 18, 2019
Accession Number
AD1104807

Entities

People

  • Jelena Vučković
  • Krishna C. Saraswat

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Chemical Vapor Deposition
  • Conduction Bands
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Crystals
  • Distributed Bragg Reflectors
  • Electron Beam Lithography
  • Energy Bands
  • Epitaxial Growth
  • Fabrication
  • Fermi Levels
  • Light Sources
  • Optical Properties
  • Semiconductors
  • Spectroscopy

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Mechanical Engineering/Mechanics of Materials.
  • Molecular Photonics/Laser Physics

Technology Areas

  • Directed Energy