Germanium-Tin Materials Development for Optoelectronics

Abstract

A new approach to communications, shortwave (SWIR), and midwave infrared (MWIR) optoelectronics, based on the growth of direct gap Ge-Sn alloys on silicon, via an intermediate SiGeSn virtual substrate (VS) is presented. Direct growth of optoelectronics on Si will allow easy,robust integration of lasers and detectors on Si readout integrated circuits (ROICs). We successfully developed SiGeSn alloys that are single-crystalline, optically-thick (up to 500 nm), and fully-relaxed with a large lattice constant (up to 5.75 ) for use as a VS grown on a Si (100)surface. We demonstrate the growth of an 800 nm Ge0.88Sn0.12 alloy formed on the SiGeSn VS that has a direct bandgap absorption at 3.3m in the MWIR.

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Document Details

Document Type
Technical Report
Publication Date
Aug 17, 2020
Accession Number
AD1106356

Entities

People

  • Chaffra A. Affouda
  • Eric M. Jackson
  • Glenn G. Jernigan
  • Jill A. Nolde
  • M. E. Twigg
  • Nadeem Mahadik

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Chemical Vapor Deposition
  • Complementary Metal-Oxide Semiconductors
  • Crystal Lattices
  • Crystals
  • Electronics Industry
  • Electronics Laboratories
  • Epitaxial Growth
  • Infrared Detectors
  • Materials
  • Molecular Beam Epitaxy
  • Optical Properties
  • Optoelectronic Devices
  • Optoelectronics
  • Power Electronics
  • Semiconductors
  • Solid State Physics

Fields of Study

  • Physics

Readers

  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics