Room Temperature Quantum Ballistic Transport in Strain-Controlled Nanowire Devices
Abstract
The findings from the time of flight experiment for strained silicon nanowires are reported in this work, in combination with a numerical simulation demonstrating new physical features involved in the quasi-quantum regime. The drift velocity of valence band holes is demonstrated to exceed greatly that of conduction electrons. These experimental data are accurately reproduced by our simulations, revealing a dramatic reduction in the holes effective mass as well as a significant increase in the mean-free path between two consecutive random scattering events due to combined effects of quantum confinement and biaxial strain.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 10, 2020
- Accession Number
- AD1106660
Entities
People
- Ashwani K. Sharma