Sample Preparation Procedure for TEM Imaging of Semiconductor Materials

Abstract

Transmission electron microscopy (TEM) allows detailed materials characterization at high resolutions. Lattice imaging requires the preparation of electron transparent samples. Preparing such thin samples without changing the characteristics of the material is not a trivial process. The Electro-Optics and Photonics Division (EO and P) of the Army Research Laboratory uses TEM for structural characterization of MBE-grown semiconductor materials. Major projects that rely on TEM include the following structures: type-II superlattices, quantum well and quantum dot superlattices, II-VI films, and GaN-based structures.. TEM analysis provides the grower with high and low resolution images of the interfaces, surfaces, and defects. This report discusses the typical preparation procedures used to fabricate TEM samples.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2004
Accession Number
AD1111666

Entities

People

  • Wendy L. Sarney

Organizations

  • United States Army Research Laboratory

Tags

DTIC Thesaurus Topics

  • Absorption Spectra
  • Abstracts
  • Acquisition
  • Availability
  • Buildings And Structures
  • Chemical Vapor Deposition
  • Classification
  • Compound Semiconductors
  • Contracts
  • Crystals
  • Electron Beams
  • Electron Microscopes
  • Electron Microscopy
  • Electronics
  • Electrons
  • Films
  • High Resolution
  • Ion Beams
  • Low Resolution
  • Materials
  • Microscopes
  • Microscopy
  • Military Research
  • Monitoring
  • Optics
  • Polishing
  • Quantum Wells
  • Research Facilities
  • Security
  • Semiconductors
  • Solid State Electronics
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing