Near Infrared Photo-detection with Monolayer Heterostructures

Abstract

Further fabrication and demonstration of the devices of the TMD heterostructures based on CVD-grown samples for NIR photodetection and the interlayer transition were accomplished, which will enable further development of next-generation large area or wafer-scale infrared optoelectronics.

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Document Details

Document Type
Technical Report
Publication Date
Oct 14, 2020
Accession Number
AD1112814

Entities

People

  • Yi-Hsien Lee

Organizations

  • National Tsing Hua University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Advanced Materials
  • Air Force Research Laboratories
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Crystal Lattices
  • Detection
  • Electronic Mail
  • Electronics Laboratories
  • Energy Bands
  • Engineering
  • Epitaxial Growth
  • Heterojunctions
  • Internet Of Things
  • Low Temperature
  • Materials
  • Materials Engineering
  • Materials Laboratories
  • Materials Science
  • Measurement
  • Microscopes
  • Optical Properties
  • Optoelectronics
  • Photodetectors
  • Physical Properties
  • Semiconductors
  • Spectra
  • Two Dimensional
  • Two-Dimensional Materials

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene