Understanding the Factors Affecting the Formation of a High Quality Interface Between Copper and Diamond
Abstract
Copper/diamond composites have great potential to lead the next generation of heat sink materials for high power electronic devices use, with potential thermal conductivity >500W/(mK) and a thermal expansion coefficient that is t unable to match with that of chip materials, in the range of 4 6 ppm/K. However, their potentially high thermal conductivity is strongly dependent on the quality of the copper/diamond interface, which is disrupted by the poor chemical affinity between the copper and the diamond. The interface layer acts as a bridge to improve the efficiency of thermal transferring between the diamond particles and the copper matrix. The interface layers characteristics determine the interface thermal conductance that is crucial for having high thermal conductivity for the copper/diamond composites, and it is also vital for obtaining high conductive copper/diamond composite to require the composite has a matrix with low defect level and high quality diamond particle reinforcement. Through the research funded by the US Air Force, we successfully fabricated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 21, 2020
- Accession Number
- AD1113335
Entities
People
- Fei Yang
Organizations
- University of Waikato