Low-Pressure Chemical Vapor Deposition (LPCVD) of Few-Layers Molybdenum Disulfide (MoS2) Crystals

Abstract

Two-dimensional (2D) molybdenum disulfide (MoS2) is a highly promising material for various 2D and quantum-enabled applications due to its excellent electrical and optical properties such as mobility of 200 700 cm2V-1s-1, fast on/off switch ratio of 107, and high photoresponsivity of 7.5 mA/W under low illumination power (80 W). Thus, a large-scale high-quality material is needed for the next technological breakthrough. In this report, we show a Low-Pressure Chemical Vapor Deposition (LPCVD) synthesis of MoS2 crystals on silicon substrates. A systematic optimization of the growth parameters, including precursor powders quantity, temperature, pressure, the relative positions of the precursors components, and the substrate orientation resulted in control of MoS2 crystal thickness. The presented work provides the basis not only for developing a large-scale MoS2 films but it can also be applied to synthesize other transition metal dichalcogenide materials and their heterostructures.

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Document Details

Document Type
Technical Report
Publication Date
Nov 24, 2020
Accession Number
AD1116421

Entities

People

  • Daniel S. Choi
  • Evgeniya H. Lock

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Crystal Growth
  • Films
  • Flow Rate
  • Frequency
  • Gas Flow
  • Heat Energy
  • Materials
  • Materials Processing
  • Materials Science
  • Military Research
  • Molecular Orbital Theory
  • Optical Properties
  • Raman Spectroscopy
  • Transitions
  • Two Dimensional
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Distributed Systems and Data Platform Development
  • Semiconductor Device Technology
  • Tribology (the study of the boundary interaction between sliding surfaces, lubrication, wear and friction).

Technology Areas

  • Quantum Computing