Characterization of Low Temperature Aluminum Oxide (Al2O3)Atomic Layer Deposition
Abstract
Al2O3 was deposited on the surface of silicon wafers at 200, 150, 100, 80, 50, 25 C using a Cambridge Nanotech Fiji Atomic Layer Deposition (ALD) tool. The low temperature atomic layer deposition of ultra thin films is very important because many substances cannot withstand high temperature depositions due to low melting and boiling points. ALD is traditionally performed at a high temperature, but low temperature deposition is needed for more fragile and delicate substances. The use of ultra thin films and low temperature atomic layer deposition is directly applicable to semiconductor engineering and many nanotechnology applications. We studied the effectiveness of low temperature atomic layer deposition and compare it to high temperature atomic layer deposition by measuring oxide thickness, resistivity, surface roughness, and pinhole density. We found that as the temperature of deposition was decreased, the oxide thickness increased, and the resistivity of the film decreased. Surface roughness and pinhole density also increases when the temperature of deposition is dropped.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 2014
- Accession Number
- AD1116861
Entities
People
- Andrew A. Chen
- Richard X. Fu
Organizations
- United States Army Research Laboratory