Gallium Nitride (GaN) RF Challenge: BAE Systems and Qorvo Submissions

Abstract

The DOD Gallium Nitride (GaN) RF Challenge is enabling development and fabrication of the best-competed concepts for high-performance, efficient broadband Monolithic Microwave Integrated Circuits (MMICs) related to the 5G expansion and to critical EW needs. The US Army Combat Capabilities Development Command Army Research Laboratory was one of the design teams for the BAE 0.18-m GaN multi-project wafer fabrication and was also one of the design teams for the Qorvo 0.15-m GaN multi-project wafer fabrication. This technical note is a brief overview of the DEVCOM Army Research Laboratory design submissions for the GaN RF Challenge.

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Document Details

Document Type
Technical Report
Publication Date
Feb 09, 2021
Accession Number
AD1122844

Entities

People

  • Ali Darwish
  • John Penn
  • Sami Hawasli

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Electronic Warfare

DTIC Thesaurus Topics

  • 5G Wireless Networks
  • Abstracts
  • Amplifiers
  • Broadband
  • Circuits
  • Compound Semiconductors
  • Department Of Defense
  • Distributed Amplifiers
  • Electron Mobility
  • Electronics Laboratories
  • Fabrication
  • Gallium
  • Gallium Nitrides
  • High Electron Mobility Transistors
  • Integrated Circuits
  • Microwave Integrated Circuits
  • Microwaves
  • Military Research
  • Monolithic Microwave Integrated Circuits
  • Nitrides
  • Semiconductors
  • Wireless Communications
  • Wireless Networks

Readers

  • Integrated Circuit Design and Technology.
  • Military Science and Technology Research and Modernization.

Technology Areas

  • 5G
  • Microelectronics