Gallium Nitride (GaN) RF Challenge: DOD Design Team Effort for Qorvo Fabrication

Abstract

The Department of Defense (DOD) Gallium Nitride (GaN) RF Challenge is enabling development and fabrication of the best concepts for high-performance, efficient, broadband monolithic microwave integrated circuits related to the 5G expansion and to critical electronic warfare needs. The circuits documented in this report are US Army Combat Capabilities Development Command Army Research Laboratory designs as part of the DOD Design Team for the Qorvo 0.15-mu m GaN multiproject wafer fabrication. When these fabricated designs are returned in 2021, they will be tested, evaluated, and documented in future technical reports.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Feb 16, 2021
Accession Number
AD1123224

Entities

People

  • John E. Penn

Organizations

  • United States Army

Tags

Communities of Interest

  • Electronic Warfare
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • 5G Wireless Networks
  • Amplifiers
  • Bandwidth
  • Broadband
  • Circuits
  • Compound Semiconductors
  • Department Of Defense
  • Electronic Warfare
  • Electronics Laboratories
  • Elements
  • Fabrication
  • Feedback Amplifiers
  • Frequency
  • Gallium Nitrides
  • Integrated Circuits
  • Microwave Integrated Circuits
  • Military Research
  • Monolithic Microwave Integrated Circuits
  • Power Amplifiers
  • Radio Frequency
  • Silicon Carbide
  • Warfare
  • X Band

Readers

  • Electronics Engineering
  • Enterprise Information Systems Architecture and Joint Command Capability Interoperability Support.
  • Semiconductor Device Technology

Technology Areas

  • 5G
  • Microelectronics