Fundamental Studies and Modeling of Radiation Effects in beta-Gallium Oxide

Abstract

We completed a detailed study to understand the low and high dose stability of Gallium Oxide to neutrons, electrons and protons, in order to simulate common radiation environments. Our method was to use a unique coupling of theory and experiment to produce a detailed understanding of radiation on this new ultra wide bandgap semiconductor and a predictive capability for new radiation hardened materials and components.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 22, 2021
Accession Number
AD1123735

Entities

People

  • Fan Ren
  • Mark E. Law
  • Steven J. Pearton

Organizations

  • University of Florida

Tags

Communities of Interest

  • Advanced Electronics
  • Biomedical
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Alpha Particles
  • Charge Carriers
  • Cosmic Rays
  • Crystals
  • Earth Orbits
  • Electric Fields
  • Electrical Properties
  • Electron Mobility
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Energy Transfer
  • Field Effect Transistors
  • Gamma Rays
  • Ionization
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Power Electronics
  • Radiation Effects
  • Semiconductor Devices
  • Semiconductors
  • Spectra
  • X Rays

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics