Analysis of Radiation Effects on Gallium Nitride Zirconium Oxide Metal Oxide Semiconductor Capacitors

Abstract

In this work, Gallium Nitride Zirconium oxide metal oxide semiconductor capacitors were exposed to a 40MeV proton beam and a 15MeV Argon heavy ion beam of radiation. Characterization of each device was done using an Agilent B1500A, switch matrix, custom-printed circuit board while using a LabVIEW program to analyze the Capacitance-Voltage (C-V), Capacitance-Frequency (C-F), and Current-Voltage (I-V) measurement prior to and post exposure. Each reticles C-V measurement and its hysteresis was then compared pre- and post-exposure for effects. Testing concluded with a time-dependent dielectric breakdown analysis. Results show that radiation exposure shifts the capacitance of the device and affects the hysteresis in its C-V measurement. Initial time-dependent dielectric breakdown data shows that devices exposed to certain fluences of radiation will extend the time it takes before oxide breakdown.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2020
Accession Number
AD1126564

Entities

People

  • Connor M. Blasch

Organizations

  • Naval Postgraduate School

Tags

DTIC Thesaurus Topics

  • Band Gaps
  • Circuit Boards
  • Compound Semiconductors
  • Cosmic Rays
  • Department Of Defense
  • Electronics Industry
  • Electronics Laboratories
  • Electrons
  • Field Effect Transistors
  • Ionizing Radiation
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Military Research
  • Modules (Electronics)
  • Power Electronics
  • Printed Circuit Boards
  • Printed Circuits
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Zirconium Oxides

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Nuclear and Radiation Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems