Exploration of Damage Mechanisms in MEMS Based Memory and Logic Devices

Abstract

The goal of this project was to explore the influence of radiation on critical structures of MEMS sensors, memory and logic devices; to reveal the extent to which radiation influences the MEMS properties; and to determine the mechanisms behind the radiation induced changes. To this end, silicon MEMS resonators were designed and fabricated and exposed to X-ray and proton irradiation, and the mechanisms behind the observed changes were determined.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2021
Accession Number
AD1128383

Entities

People

  • Bruce Alphenaar
  • Charles N. Arutt
  • Huiqi Gong
  • J. L. Davidson
  • Kevin Walsh
  • Michael Alles
  • Pranoy Deb Shuvra
  • Shamus McNamara
  • Wenjun Liao

Organizations

  • University of Louisville
  • Vanderbilt University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Dose Rate
  • Elastic Properties
  • Electric Fields
  • Fermi Levels
  • Frequency
  • Frequency Response
  • Frequency Shift
  • Ionization
  • Ionizing Radiation
  • Logic Devices
  • Materials
  • Measurement
  • Micro-Machines
  • Microelectromechanical Systems
  • Modulus Of Elasticity
  • Radiation Effects
  • Resonant Frequency
  • Semiconductors
  • Three Dimensional
  • X Rays

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Nuclear and Radiation Engineering.