A New Approach to Develop Atomic Scale Understanding of Radiation Effects in Emerging Nanoscale Memory and Logic Materials and Devices

Abstract

We have utilized several electrically detected magnetic resonance (EDMR) techniques to develop an atomic scale understanding of radiation damage (and other) related reliability problems in several systems of great importance in emerging memory and logic devices. The EDMR techniques utilized in the study were spin dependent recombination (SDR) and spin dependent trap assisted tunneling (SDTAT). In our study we exploited the near field and frequency independent sensitivity of both SDR and SDTAT EDMR. Systems and materials involved in the study included tri-gate (also called FinFET) metal oxide silicon field effect transistors (MOSFETs), low dielectric constant, so-called low -k dielectrics, utilized in interlayer dielectrics of present-day high performance integrated circuitry, SiGe MOSFETs, and HfO2 resistive random-access memories.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2021
Accession Number
AD1128393

Entities

People

  • Patrick M. Lenahan

Organizations

  • Pennsylvania State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amorphous Materials
  • Ceramic Materials
  • Charge Carriers
  • Dielectrics
  • Electromagnetic Fields
  • Electronics Laboratories
  • Energy Bands
  • Exclusion Principle
  • Fermi Levels
  • Field Effect Transistors
  • Gamma Rays
  • Magnetic Fields
  • Magnetic Resonance
  • Materials
  • Materials Science
  • Measurement
  • Metal Oxide Semiconductors
  • Modules (Electronics)
  • Power Electronics
  • Radio Frequency
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Nanofabrication and Microfabrication.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.