Radiation Effects in Ultra-Wide Bandgap AlN and Diamond Schottky Diodes

Abstract

We performed comprehensive studies on the radiation effects on UWBG AlN and Ga2O3 materials. Proton, electron, and gamma-ray irradiation experiments were performed on UWBG semiconductors as well as on Schottky diodes. Material and device characterizations such as I-V, C-V, XRD, AFM and DLTS were conducted to investigate the radiation damage processes. Key information in defect levels, dose effects on electrical performance and crystal qualities, were obtained. The results were published in peer-reviewed journals and international conferences. This work will significantly advance fundamental knowledge in radiation effects in emerging UWBG devices, critical to various DoD applications.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 2021
Accession Number
AD1134706

Entities

People

  • Yuji Zhao

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Department Of Defense
  • Diameters
  • Diffraction
  • Electron Microscopes
  • Electronics Laboratories
  • Electrons
  • Energy Levels
  • Fabrication
  • Gamma Rays
  • Ionizing Radiation
  • Mass Spectrometry
  • Materials Science
  • Metal-Semiconductor Junctions
  • Microscopes
  • Military Operations
  • Roughness
  • Schottky Diodes
  • Semiconductors
  • Surface Roughness
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Defense Technology Research and Development.
  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics