Development of Beta Gallium Oxide on Large Area Substrates

Abstract

In this program, we have explored high-quality homoepitaxy growth with beta-Ga2O3 using conventional PAMBE and MOCATAXY on different crystal orientations, and MOCVD (with Agnitron Collaboration) for high-mobility epitaxial films. We have also developed device design and processing with Ga2O3 for high-power applications.

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Document Details

Document Type
Technical Report
Publication Date
Jun 27, 2021
Accession Number
AD1142300

Entities

People

  • James A. Speck

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • California
  • Conduction Bands
  • Crystals
  • Diodes
  • Energy Bands
  • Epitaxial Growth
  • Films
  • Low Temperature
  • Materials
  • Metal-Semiconductor Junctions
  • Orientation (Direction)
  • Oxides
  • Radiation
  • Schottky Diodes
  • Scientific Research
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics