A CRITICAL ASSESSMENT OF ELECTRON TRANSPORT THEORY: Revised Theory of Ionized Impurity Scattering- Phase 2

Abstract

A revised theory is presented to account for electron scattering by ionized impurities in room temperature (300K) GaAs. The comparison between the revised theory and experiment shows agreement to within about 3 to 4% far better than previous theories by Brooks-Herring and by Falicov-Cuevas. The revised theory also resolves a long-standing question regarding dopant compensation in GaAs. According to the revised theory, compensation does not appear to occur for Group VI dopants in GaAs. However, as expected, it does occur for an amphoteric dopant such as Si.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 2021
Accession Number
AD1145687

Entities

People

  • D. L. Rode

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Air Force Research Laboratories
  • Compound Semiconductors
  • Crystal Growth
  • Crystals
  • Electron Mobility
  • Electron Scattering
  • Electrons
  • Energy Gaps
  • Equations
  • Experimental Data
  • Gallium Arsenides
  • Government Procurement
  • Governments
  • Materials
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics