Electrically Detected Electron Nuclear Double Resonance in Solid State Electronics

Abstract

During the past four years we have worked to develop electrically detected electron nuclear double resonance (EDENDOR). The conventional resonance technique known as electron nuclear double resonance (ENDOR) has been an exceptionally powerful tool in the study of the immediate surroundings of defects in semiconductors and insulators for quite some time. Unfortunately, conventional ENDOR has never been very useful in the study of semiconductor device problems because it has a sensitivity typically two to three orders of magnitude less than that of the sensitivity of the conventional electron paramagnetic resonance (EPR) technique upon which it is based. Since conventional EPR sensitivity is about 10(exp 10) total electron spins within the sample under study, conventional ENDOR sensitivity is, at best, about 10^12 total defects. This number is far too large for studies of defects within meaningful micro or nano technology devices. The technique of electrically detected magnetic resonance (EDMR) offers a possible solution to the sensitivity limits of ENDOR.EDMR sensitivity is about seven orders of magnitude more sensitive than that of conventional EPR, around 1000 total defects (with considerable effort). By combining the sensitivity of EDMR with ENDOR we hoped to develop a new technique with all of the analytical power of ENDOR and a sensitivity so greatly enhanced that it would allow meaningful measurements in micro and nanotechnology scale devices. In this effort we have been largely successful, demonstrating EDENDOR, for the first time, in a fully processed semiconductor device, a pn junction diode. We have also demonstrated EDENDOR in thin films of amorphous hydrogenated silicon and thin films of amorphous boron. (It should be pointed out that our work does not constitute the first observation of electrically detected ENDOR. Two other studies were published previously, neither involving a fully processed device and both involved relatively weak ENDOR responses.)

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Document Details

Document Type
Technical Report
Publication Date
Aug 16, 2021
Accession Number
AD1146117

Entities

People

  • Patrick M. Lenahan

Organizations

  • Pennsylvania State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Charge Carriers
  • Electromagnetic Fields
  • Electronics Laboratories
  • Exclusion Principle
  • Field Effect Transistors
  • Magnetic Fields
  • Magnetic Resonance
  • Materials Science
  • Military Research
  • P-N Junction Diodes
  • P-N Junctions
  • Power Electronics
  • Resonant Frequency
  • Resonators
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Spin Quantum Numbers

Readers

  • Electronics Engineering
  • Materials Science and Engineering.
  • Systems Analysis and Design

Technology Areas

  • Biotechnology
  • Microelectronics