Theory and Modeling of Ultrafast Electron Emission from Nanostructures
Abstract
The generation of electron beams, and their subsequent manipulation, is directly dependent upon the physics of the emission process, especially for high brightness beams, but those methods when used in beam simulation presume instantaneous emission using 1D semi-analytic theories applied to static barriers. The prediction of beam properties is essential for the predictive design and development of technologies of critical importance to devices that rely on tunneling and/or vacuum transport, particularly in nano-devices and harsh environments such as pulses drawn from carbon fibers. Emission modeling is used to simulate many DoD technologies: High Power Microwave (HPM) devices, Directed Energy, RF/THz technologies, EW, multi-ebeam lithography, electron microscopy, radiation hard and/or high temperature electronics, rf and voltage breakdown, micro-discharges, ion propulsion / microthrusters for satellites, space mission electronics. The present study documents the overall theoretical effort on the tunneling time problem, thermal field emission, and heating effects in microstructures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 2021
- Accession Number
- AD1149647
Entities
People
- Andrew R. Shabaev
- Kevin L. Jensen
- Michael Osofsky
Organizations
- United States Naval Research Laboratory